ssm5g09tu 2014-03-01 1 silicon p channel mos type (u-mos )/silicon epitaxial schottky barrier diode ssm5g09tu dc-dc converter ? combined pch mosfet and scho ttky diode into one package. ? low r ds (on) and low v f absolute maximum ratings (ta = 25c) mosfet characteristics symbol rating unit drain-source voltage v ds ?12 v gate-source voltage v gss 8 v dc i d ?1.5 drain current pulse i dp (note 2) ?6 .0 a p d (note 1) 0.5 drain power dissipation t = 10s 0.8 w channel temperature t ch 150 c absolute maximum ratings (ta = 25c) schottky diode characteristics symbol rating unit maximum (peak) reverse voltage v rm 15 v reverse voltage v r 12 v average forward current i o 0.5 a peak one cycle surge forward current (non-repetitive) i fsm 2 (50 hz) a junction temperature t j 125 c absolute maximum ratings (ta = 25c) mosfet, diode common characteristics symbol rating unit storage temperature t stg ?55~125 c operating temperature t opr (note 3) ?40~85 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temper ature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) note 2: the pulse width limited by max channel temperature. note 3: operating temperature limited by max channel temperat ure and max junction temperature. unit: mm ufv jedec ? jeita ? toshiba 2-2r1a weight: 7 mg (typ.) start of commercial production 2003-09
ssm5g09tu 2014-03-01 2 marking equivalent circuit handling precaution when handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against st atic discharge. operators should wear anti-static clothing and use containers and other objects that are made of anti-static materials. the channel-to-ambient thermal resistance r th (ch-a) and the drain power dissipation p d vary according to the board material, board area, board thickness and pad area. when using this device, be sure to take heat dissipation fully into account. 5 1 3 kep 2 4 5 13 2 4
ssm5g09tu 2014-03-01 3 mosfet electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 8 v, v ds = 0 ? ? 1 a v (br) dss i d = ?1 ma, v gs = 0 ?12 ? ? drain-source breakdown voltage v (br) dsx i d = ?1 ma, v gs = +8 v ?4 ? ? v drain cut-off current i dss v ds = ?12 v, v gs = 0 ? ? ?1 a gate threshold voltage v th v ds = ?3 v, i d = ?0.1 ma ?0.5 ? ? 1.1 v forward transfer admittance |y fs | v ds = ?3 v, i d = ? 0.75 a (note 4) 1.75 3.5 ? s i d = ?0.75 a, v gs = ? 4 v (note 4) ? 100 130 drain-source on-resistance r ds (on) i d = ?0.75 a, v gs = ? 2.5 v (note 4) ? 130 200 m input capacitance c iss v ds = ?10 v, v gs = 0, f = 1 mhz ? 550 ? pf reverse transfer capacitance c rss v ds = ?10 v, v gs = 0, f = 1 mhz ? 155 ? pf output capacitance c oss v ds = ?10 v, v gs = 0, f = 1 mhz ? 170 ? pf turn-on time t on ? 34 ? switching time turn-off time t off v dd = ?10 v, i d = ?0.75 a v gs = 0 to ? 2.5 v, r g = 4.7 ? 28 ? ns note 4: pulse measurement switching time test circuit precaution v th can be expressed as the voltage between the gate an d source when the low operating current value is i d = 100 a for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th . (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) be sure to take this into consideration when using the device. t on t off (b) v in (c) v out 0 v ?2.5 v v dd v ds (on) t r t f 10% 90% 90% 10% (a) test circuit v dd = ?10 v r g = 4.7 duty 1% v in : t r , t f < 5 ns common source ta = 25c 0 ?2.5 v in out v dd 10 s r g
ssm5g09tu 2014-03-01 4 schottky diode electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit v f (1) i f = 0.3 a ? 0.33 0.39 v forward voltage v f (2) i f = 0.5 a ? 0.37 0.43 v reverse current i r v r = 12 v ? ? 100 a total capacitance c t v r = 0 v, f = 1 mhz ? 80 ? pf precaution the schottky barrier diode of this pr oduct are having large-reverse-current -leakage characteristic compare to the other switching diodes. this current leakage and no t proper operating temperat ure or voltage may cause thermal runaway. be sure to take forward and reverse loss into consideration when you design.
ssm5g09tu 2014-03-01 5 mos electrical characteristics graph i d - v ds (mosfet) -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 -2 -1.5 -1 -0.5 0 drain-source voltage v ds (v) drain current i d (ma) common source ta=25 v gs =-1.8v -2.0v -2.5v -4.0v i d - v gs (mosfet) 0.01 0.1 1 10 100 1000 10000 -2.5 -2 -1.5 -1 -0.5 0 gate-source voltage v gs (v) drain current i d (ma) common source v ds =-3v ta=85 -25 25 - - - - - - - r ds(on) - i d (mosfet) 0 100 200 300 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 drain current i d (a) drain-source on-resistance r ds(on) (m) v gs =-4.0v -2.5v common source ta=25 r ds(on) - v gs (mosfet) 0 0.1 0.2 0.3 0.4 0.5 -8 -6 -4 -2 0 gate-source voltage v gs (v) drain-source on-resistance r ds(on) () common source i d =-0.6a ta=85 25 -25 r ds(on) - ta (mosfet) 0 100 200 300 -25 0 25 50 75 100 ambient temperture ta () drain-source on-resistance r ds(on) () -4.0v -2.5v common source i d =-0.6a vth - ta (mosfet) -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 -25 0 25 50 75 100 ambient temperture ta () gate threshold voltage vth(v) common source i d =-0.1ma v ds =-3v
ssm5g09tu 2014-03-01 6 |yfs| - i d (mosfet) 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 drain current i d (a) forward transfer admittance |yfs| (ms) commonm source v ds =-3v ta=25 -- - - - c - v ds (mosfet) 10 100 1000 0.1 1 10 100 drain-source voltage v ds (v) capacitance c (pf) common source v gs =0v f=1mhz ta=25 c iss c oss c rss ---- i dr - v ds (mosfet) -2 -1.5 -1 -0.5 0 0 0.2 0.4 0.6 0.8 1 drain-source voltage v ds (v) drain reverse current i dr (ma) common source v gs =0 ta=25 i dr d g s t - i d (mosfet) 0.1 1 10 100 1000 0.01 0.1 1 10 drain curren i d (ma) switching time t (ns) common source v dd =-10v v gs =02.5v ta=25 toff tf ton tr -- - - dynamic input characteristic (mosfet) -10 -8 -6 -4 -2 0 012345678910 tatal gate charge q g (nc) gate-source voltage v gs (v) common source v dd =-10v i d =1.2a ta=25
ssm5g09tu 2014-03-01 7 safe operating area (mosfet) 0.001 0.01 0.1 1 10 0.1 1 10 100 drain-source current v ds (v) drain current i d (a) dc operation ta=25 i d max (continuous) i d max (pu lsed) * 1ms 10ms 100ms mounted on fr4 board (25.4 mm ? 25 .4 mm ? 1 .6 t cu pad: 645 mm2 ) *:single nonrepetive pulse ta ? 25c curves must be derated linealy with increase in temperture. - - - - - - - - - p d - ta (mosfet) 0 100 200 300 400 500 600 0 20 40 60 80 100 120 140 160 ambient temperature ta () drain power dissipationp d (mw) mounted on fr4 board (25.4 mm ? 25.4 mm ? 1.6 t, cu pad: 645 mm2
ssm5g09tu 2014-03-01 8 sbd electrical characteristics graph reverse voltage v r (v) i r ? v r (sbd) reverse current i r (ma) 10 0.001 0 1 0.1 0.01 12 3 pulse measurement ta = 25c 50 6 9 75 85 forward voltage v f (v) i f ? v f (sbd) 1 1000 100 10 0.1 0.4 0.5 0.7 75 50 ta = 25c 0 0 0.2 0.3 0.6 85 forward current i f (ma) capacitance c t (pf) reverse voltage v r (v) c t ? v r (sbd) 3000 1 10 100 1000 0.01 0.1 1 10 100 f = 1 mhz ta = 25c
ssm5g09tu 2014-03-01 9 transient thermal impedance graph 1 0.001 1000 100 10 0.1 100 1000 1 single pulse mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) 0.01 10 pulse width t w (s) r th ? t w (sbd) transient thermal impedance r th (c/w) pulse width t w (s) r th ? t w (mosfet) transient thermal impedance r th (c/w ) 0.001 1000 0.01 0.1 1 100 10 100 1000 1 10 single pulse mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 )
ssm5g09tu 2014-03-01 10 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the "toshiba semiconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? 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product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? absent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability wh atsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? 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